| PART |
Description |
Maker |
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NE57810 NE57810S |
Advanced DDR memory termination power with external reference in
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| NCP51190-17 |
1.5A DDR Memory Termination Regulator
|
ON Semiconductor
|
| SE98ATL SE98ATP SE98APW |
DDR memory module temp sensor, 1.7 V to 3.6 V
|
NXP Semiconductors
|
| SE98 |
DDR memory module temp sensor, 3.3 V
|
NXP Semiconductors
|
| PI6CV857 PI6CV857L PI6CV857LA |
PLL Clock Driver for 2.5V DDR-SDRAM Memory
|
Pericom Technology
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SES900 SE97 |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
| TPS51116 |
Complete DDR & DDR2 Memory Power
From old datasheet system
|
ti
|
